We synthesize semiconducting nanowires (such as ZnO, In2O3, GaN, etc) and characterize their physical properties. We also fabricate nanowire field effect transistor (FET) devices and study their electrical properties.

1. Charge transport characterization
We investigate basic electrical transport properties of various semiconducting nanowires.

- We study on the scaling effect (including short channel effect) of nanowire FETs using conducting atomic force microscopy

Ref. Gunho Jo et al, “Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy”, Appl. Phys. Lett. 90, 173106 (2007) [Abstract & PDF]
Ref. Gunho Jo et al, "Channel-length and gate-bias dependence of contact resistance and mobility for In2O3 nanowire field effect transistors", J. Appl. Phys.  102, 084508 (2007)  [Abstract & PDF]
 

- We study on surface-tailored ZnO nanowire FETs. Particularly, the operational modes in ZnO nanowire FETs are controlled depending on the surface morphology.

Ref. Woong-Ki Hong et al, “Tunable Electronic Transport Characteristics of Surface Architecture-Controlled ZnO Nanowire Field Effect Transistors", Nano Lett. 8,950-956 (2008) [Abstract & PDF]
Ref. Woong-Ki Hong et al, “Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes”, Appl. Phys. Lett. 90, 243103 (2007) [Abstract & PDF]
Ref. Woong-Ki Hong, Gunho Jo, Soon-Shin Kwon, Sunghoon Song, and Takhee Lee,“Electrical Properties of Surface-tailored ZnO Nanowire Field Effect Transistors”, IEEE Trans. Electron Dev. 55, 3020-3029 (2008)  [Abstract & PDF] *Invited review paper

- We study on the effect of ZnO nanowire FETs by different environments, measurement conditions, passivation effects, etc.

Ref. Jongsun Maeng et al, "Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field effect transistors under different environments", Appl. Phys. Lett. 92, 233120 (2008)  [Abstract & PDF]
Ref. Sunghoon Song et al, "Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments", Appl. Phys. Lett. 92, 263109 (2008)  [Abstract & PDF]

 

2. Nanowire applications
We study circuit point of view using nanowires, nanowire FETs on flexble substrate, hybrid organic/inorganic nanostructures, etc.


- We study logic circuits by controlling the operational modes of ZnO nanowire by various methods such as proton beam irradiation or surface

Ref. Gunho Jo et al, “Hybrid Complementary Logic Circuits of One-Dimensional Nanomaterials with Adjustment of Operation Voltage”, Advanced Materials, Early View web published (April 14, 2009).  [Abstract & PDF] *It will appear as Front COVER picture article. 
Ref. Woong-Ki Hong et al, "Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation", Nanotechnology, 17, 5675 (2006) [Abstract & PDF]
Ref. Gunho Jo et al,“Logic inverters composed of controlled depletion-mode and enhancement-mode ZnO nanowire transistors", Appl. Phys. Lett. accepted (2009).

- We study the electrical properties of nanowire FETs on flexible substrates.

Ref. Soon-Shin Kwon et al, "Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field Effect Transistors on Bent Flexible Substrates”, Advanced Materials, 20, 4557 (2008) [Abstract & PDF]
 

- We study hybrid nanostructures involving nanowires and organic materials.

Ref. Jongsun Maeng et al, "Transient reverse current phenomenon in a p-n heterojunction comprised of PEDOT:PSS and metal organic vapor-phase epitaxial ZnO nanowall", Appl. Phys. Lett. 93, 123109 (2008)  [Abstract & PDF]